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CSD17313Q2Q1T - 6-WSON

CSD17313Q2Q1T

Active
Texas Instruments

AUTOMOTIVE 30-V N CHANNEL NEXFET™ POWER MOSFET 6-WSON 0 TO 0

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CSD17313Q2Q1T - 6-WSON

CSD17313Q2Q1T

Active
Texas Instruments

AUTOMOTIVE 30-V N CHANNEL NEXFET™ POWER MOSFET 6-WSON 0 TO 0

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17313Q2Q1T
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)3 V, 8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)17 W, 2.4 W
Rds On (Max) @ Id, Vgs [Max]30 mOhm
Supplier Device Package6-WSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V, -8 V
Vgs(th) (Max) @ Id [Max]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigiKeyTape & Reel (TR), Cut Tape (CT), Digi-Reel® 1$ 1.56
10$ 1.05
100$ 0.74
TMEN/A 1$ 1.09
5$ 0.98
25$ 0.87
100$ 0.78
250$ 0.73

CSD173 Series

Automotive 30-V N channel NexFET™ power MOSFET

PartInput Capacitance (Ciss) (Max) @ Vds [Max]Rds On (Max) @ Id, Vgs [Max]Current - Continuous Drain (Id) @ 25°COperating Temperature [Max]Operating Temperature [Min]Drive Voltage (Max Rds On, Min Rds On)Drain to Source Voltage (Vdss)Vgs(th) (Max) @ Id [Max]Power Dissipation (Max)Vgs (Max)FET TypeSupplier Device PackageMounting TypeGate Charge (Qg) (Max) @ VgsTechnology
Texas Instruments
CSD17313Q2Q1T
340 pF
30 mOhm
5 A
150 °C
-55 °C
3 V, 8 V
30 V
1.8 V
2.4 W, 17 W
-8 V, 10 V
N-Channel
6-WSON (2x2)
Surface Mount
2.7 nC
MOSFET (Metal Oxide)

Description

General part information

CSD173 Series

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.