CSD173 Series
Automotive 30-V N channel NexFET™ power MOSFET
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
Automotive 30-V N channel NexFET™ power MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Vgs (Max) | FET Type | Supplier Device Package | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17313Q2Q1T | 340 pF | 30 mOhm | 5 A | 150 °C | -55 °C | 3 V, 8 V | 30 V | 1.8 V | 2.4 W, 17 W | -8 V, 10 V | N-Channel | 6-WSON (2x2) | Surface Mount | 2.7 nC | MOSFET (Metal Oxide) |
Key Features
• Qualified for Automotive ApplicationsOptimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistancePb-FreeRoHS CompliantHalogen-FreeSON 2-mm × 2-mm Plastic PackageQualified for Automotive ApplicationsOptimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistancePb-FreeRoHS CompliantHalogen-FreeSON 2-mm × 2-mm Plastic Package
Description
AI
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.