
IPW50R299CPFKSA1
ObsoleteInfineon Technologies
MOSFET N-CH 550V 12A TO247-3
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IPW50R299CPFKSA1
ObsoleteInfineon Technologies
MOSFET N-CH 550V 12A TO247-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPW50R299CPFKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 550 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 104 W |
| Rds On (Max) @ Id, Vgs | 299 mOhm |
| Supplier Device Package | PG-TO247-3-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPW50R Series
N-Channel 550 V 12A (Tc) 104W (Tc) Through Hole PG-TO247-3-1
Documents
Technical documentation and resources