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IPW50R299CPFKSA1 - PG-TO247-3

IPW50R299CPFKSA1

Obsolete
Infineon Technologies

MOSFET N-CH 550V 12A TO247-3

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IPW50R299CPFKSA1 - PG-TO247-3

IPW50R299CPFKSA1

Obsolete
Infineon Technologies

MOSFET N-CH 550V 12A TO247-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW50R299CPFKSA1
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)550 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds1190 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs299 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPW50R Series

N-Channel 550 V 12A (Tc) 104W (Tc) Through Hole PG-TO247-3-1

Documents

Technical documentation and resources