IPW50R Series

Catalog

MOSFET N-CH 550V 17A TO247-3

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [custom]
Infineon Technologies IPW50R199CPFKSA1	PG-TO247-3-1	550 V	TO-247-3	N-Channel	45 nC	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	139 W	10 V	1800 pF	199 mOhm	Through Hole	17 A	3.5 V
Infineon Technologies IPW50R190CEFKSA1	PG-TO247-3-1	500 V	TO-247-3	N-Channel		MOSFET (Metal Oxide)	20 V	-55 °C	150 °C		13 V		190 mOhm	Through Hole	18.5 A	3.5 V	127 W	1137 pF	47.2 nC
Infineon Technologies IPW50R280CEFKSA1	PG-TO247-3-1	500 V	TO-247-3	N-Channel		MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	92 W	13 V		280 mOhm	Through Hole	13 A			773 pF		3.5 V	32.6 nC
Infineon Technologies IPW50R299CPFKSA1	PG-TO247-3-1	550 V	TO-247-3	N-Channel		MOSFET (Metal Oxide)	20 V	-55 °C	150 °C		10 V		299 mOhm	Through Hole	12 A	3.5 V	104 W	1190 pF	31 nC