Zenode.ai Logo
Beta
K
IPW50R190CEFKSA1 - IHW15N120R3FKSA1

IPW50R190CEFKSA1

Obsolete
Infineon Technologies

MOSFET N-CH 500V 18.5A TO247-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
IPW50R190CEFKSA1 - IHW15N120R3FKSA1

IPW50R190CEFKSA1

Obsolete
Infineon Technologies

MOSFET N-CH 500V 18.5A TO247-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW50R190CEFKSA1
Current - Continuous Drain (Id) @ 25°C18.5 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)13 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs47.2 nC
Input Capacitance (Ciss) (Max) @ Vds1137 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)127 W
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IPW50R Series

N-Channel 500 V 18.5A (Tc) 127W (Tc) Through Hole PG-TO247-3-1

Documents

Technical documentation and resources