IDH08G65C6XKSA1

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 20 A, 12.2 NC, TO-220

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IDH08G65C6XKSA1

Active

Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 20 A, 12.2 NC, TO-220

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDH08G65C6XKSA1

Capacitance @ Vr, F	401 pF
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.35 V

IDH08G65 Series

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Current - Average Rectified (Io)
Infineon Technologies IDH08G65C6XKSA1	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	401 pF	650 V	27 µA	1.35 V	PG-TO220-2	No Recovery Time
Infineon Technologies IDH08G65C5XKSA1	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	250 pF	650 V	280 µA	1.7 V	PG-TO220-2-2	No Recovery Time	8 A
Infineon Technologies IDH08G65C5XKSA2	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	250 pF	650 V	140 µA	1.7 V	PG-TO220-2-1	No Recovery Time	8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.66
		50	$ 1.85
		100	$ 1.67
		500	$ 1.50
		1000	$ 1.27
		2000	$ 1.20
Newark	Each	1	$ 3.62
		10	$ 2.84
		100	$ 1.85
		500	$ 1.73
		1000	$ 1.33

Description

General part information

IDH08G65 Series

TheCoolSiC™ Schottky diode 650V G6is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Qcx VF).

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet