IDH08G65C5XKSA2

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 8 A, 13 NC, TO-220

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IDH08G65C5XKSA2

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, SINGLE, 650 V, 8 A, 13 NC, TO-220

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDH08G65C5XKSA2

Capacitance @ Vr, F	250 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	140 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

IDH08G65 Series

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Current - Average Rectified (Io)
Infineon Technologies IDH08G65C6XKSA1	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	401 pF	650 V	27 µA	1.35 V	PG-TO220-2	No Recovery Time
Infineon Technologies IDH08G65C5XKSA1	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	250 pF	650 V	280 µA	1.7 V	PG-TO220-2-2	No Recovery Time	8 A
Infineon Technologies IDH08G65C5XKSA2	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	250 pF	650 V	140 µA	1.7 V	PG-TO220-2-1	No Recovery Time	8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 1.73
Newark	Each	1	$ 2.62
		10	$ 2.33
		100	$ 2.27
		500	$ 1.48

Description

General part information

IDH08G65 Series

The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).

Documents

Technical documentation and resources