IDH08G65 Series

Catalog

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 6G SERIES, SINGLE, 650 V, 20 A, 12.2 NC, TO-220

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Current - Average Rectified (Io)
Infineon Technologies IDH08G65C6XKSA1	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	401 pF	650 V	27 µA	1.35 V	PG-TO220-2	No Recovery Time
Infineon Technologies IDH08G65C5XKSA1	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	250 pF	650 V	280 µA	1.7 V	PG-TO220-2-2	No Recovery Time	8 A
Infineon Technologies IDH08G65C5XKSA2	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Through Hole	TO-220-2	250 pF	650 V	140 µA	1.7 V	PG-TO220-2-1	No Recovery Time	8 A