BSZ065N06LS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 6.5 MOHM;
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BSZ065N06LS5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 6.5 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ065N06LS5ATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 46 W |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.91 | |
| 10 | $ 1.22 | |||
| 100 | $ 0.82 | |||
| 500 | $ 0.65 | |||
| 1000 | $ 0.60 | |||
| 2000 | $ 0.55 | |||
| Digi-Reel® | 1 | $ 1.91 | ||
| 10 | $ 1.22 | |||
| 100 | $ 0.82 | |||
| 500 | $ 0.65 | |||
| 1000 | $ 0.60 | |||
| 2000 | $ 0.55 | |||
| Tape & Reel (TR) | 5000 | $ 0.51 | ||
Description
General part information
BSZ065 Series
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Qg) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Documents
Technical documentation and resources