BSZ065 Series

Catalog

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 6.5 MOHM;

Part	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies BSZ065N06LS5ATMA1	20 V	MOSFET (Metal Oxide)	6.5 mOhm	13 nC	N-Channel	8-PowerTDFN	46 W	60 V	1800 pF	2.3 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V
Infineon Technologies BSZ065N03LSATMA1	20 V	MOSFET (Metal Oxide)	6.5 mOhm		N-Channel	8-PowerTDFN	2.1 W 26 W	30 V		2 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V	670 pF	10 nC