BSZ065N03LSATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 6.5 MOHM;

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BSZ065N03LSATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 6.5 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ065N03LSATMA1

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	26 W, 2.1 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSZ065 Series

Part	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies BSZ065N06LS5ATMA1	20 V	MOSFET (Metal Oxide)	6.5 mOhm	13 nC	N-Channel	8-PowerTDFN	46 W	60 V	1800 pF	2.3 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V
Infineon Technologies BSZ065N03LSATMA1	20 V	MOSFET (Metal Oxide)	6.5 mOhm		N-Channel	8-PowerTDFN	2.1 W 26 W	30 V		2 V	Surface Mount	-55 °C	150 °C	4.5 V 10 V	670 pF	10 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.22
		10	$ 0.77
		100	$ 0.51
		500	$ 0.39
		1000	$ 0.36
		2000	$ 0.33
	Digi-Reel®	1	$ 1.22
		10	$ 0.77
		100	$ 0.51
		500	$ 0.39
		1000	$ 0.36
		2000	$ 0.33
	Tape & Reel (TR)	5000	$ 0.29
		10000	$ 0.27

Description

General part information

BSZ065 Series

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6).

Documents

Technical documentation and resources