IPB60R099CPATMA1

NRND

Infineon Technologies

POWER MOSFET, N CHANNEL, 650 V, 31 A, 0.09 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IPB60R099CPATMA1

NRND

Infineon Technologies

POWER MOSFET, N CHANNEL, 650 V, 31 A, 0.09 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsApplication Note EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R099CPATMA1

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	255 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPB60R099 Series

Part	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package
Infineon Technologies IPB60R099P7ATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	4 V	117 W	31 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	45 nC	N-Channel	20 V	-55 °C	150 °C	Surface Mount	1952 pF
Infineon Technologies IPB60R099C7ATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	4 V		22 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		N-Channel	20 V	-55 °C	150 °C	Surface Mount		42 nC	1819 pF	110 W	PG-TO263-3-2
Infineon Technologies IPB60R099CPATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	3.5 V	255 W	31 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		N-Channel	20 V	-55 °C	150 °C	Surface Mount		80 nC	2800 pF		PG-TO263-3-2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 9.18
		10	$ 6.30
		100	$ 4.67
		500	$ 4.24
	Digi-Reel®	1	$ 9.18
		10	$ 6.30
		100	$ 4.67
		500	$ 4.24
	Tape & Reel (TR)	1000	$ 4.24
Newark	Each (Supplied on Cut Tape)	1	$ 5.46
		10	$ 4.19
		25	$ 3.83
		50	$ 3.47
		100	$ 3.11
		250	$ 2.92
		500	$ 2.75

Description

General part information

IPB60R099 Series

The IPB60R099CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.

Documents

Technical documentation and resources

Application Note EN

Datasheet