IPB60R099 Series

Catalog

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 99 MOHM;

Part	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package
Infineon Technologies IPB60R099P7ATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	4 V	117 W	31 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	45 nC	N-Channel	20 V	-55 °C	150 °C	Surface Mount	1952 pF
Infineon Technologies IPB60R099C7ATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	4 V		22 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		N-Channel	20 V	-55 °C	150 °C	Surface Mount		42 nC	1819 pF	110 W	PG-TO263-3-2
Infineon Technologies IPB60R099CPATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	3.5 V	255 W	31 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		N-Channel	20 V	-55 °C	150 °C	Surface Mount		80 nC	2800 pF		PG-TO263-3-2