IPB60R099P7ATMA1

Active

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 99 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPB60R099P7ATMA1

Active

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 99 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R099P7ATMA1

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1952 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	117 W
Rds On (Max) @ Id, Vgs	99 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPB60R099 Series

Part	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package
Infineon Technologies IPB60R099P7ATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	4 V	117 W	31 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	45 nC	N-Channel	20 V	-55 °C	150 °C	Surface Mount	1952 pF
Infineon Technologies IPB60R099C7ATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	4 V		22 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		N-Channel	20 V	-55 °C	150 °C	Surface Mount		42 nC	1819 pF	110 W	PG-TO263-3-2
Infineon Technologies IPB60R099CPATMA1	600 V	MOSFET (Metal Oxide)	99 mOhm	3.5 V	255 W	31 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		N-Channel	20 V	-55 °C	150 °C	Surface Mount		80 nC	2800 pF		PG-TO263-3-2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.65
		10	$ 2.75
		100	$ 2.02
		500	$ 1.83
	Digi-Reel®	1	$ 3.65
		10	$ 2.75
		100	$ 2.02
		500	$ 1.83
	Tape & Reel (TR)	1000	$ 1.63
Newark	Each (Supplied on Full Reel)	1000	$ 1.67

Description

General part information

IPB60R099 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources