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STD12NF06T4 - MFG_DPAK(TO252-3)

STD12NF06T4

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STMicroelectronics

N-CHANNEL 60V - 0.08OHM - 12A - DPAK STRIPFET(TM) II POWER MOSFET

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DocumentsDatasheet+16
STD12NF06T4 - MFG_DPAK(TO252-3)

STD12NF06T4

Active
STMicroelectronics

N-CHANNEL 60V - 0.08OHM - 12A - DPAK STRIPFET(TM) II POWER MOSFET

Deep-Dive with AI

DocumentsDatasheet+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD12NF06T4
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds315 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.18
10$ 0.97
100$ 0.75
500$ 0.64
1000$ 0.52
Digi-Reel® 1$ 1.18
10$ 0.97
100$ 0.75
500$ 0.64
1000$ 0.52
Tape & Reel (TR) 2500$ 0.49
5000$ 0.47
12500$ 0.44
NewarkEach (Supplied on Full Reel) 1$ 0.43

Description

General part information

STD12NF06LT4 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.