Technical Specifications
Parameters and characteristics for this part
| Specification | STD12NF06T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD12NF06LT4 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources
Datasheet
DatasheetFlyers (5 of 6)
AN4390
Application NotesDS2577
Product SpecificationsAN1703
Application NotesTN1224
Technical Notes & ArticlesTN1225
Technical Notes & ArticlesAN3267
Application NotesFlyers (5 of 6)
AN4191
Application NotesFlyers (5 of 6)
UM1575
User ManualsFlyers (5 of 6)
AN4337
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
