STD12N50DM2

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STMicroelectronics

N-CHANNEL 500 V, 0.299 OHM TYP., 11 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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STD12N50DM2

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STMicroelectronics

N-CHANNEL 500 V, 0.299 OHM TYP., 11 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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DocumentsDatasheet TN1224 +20

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD12N50DM2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	628 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STD12NF06LT4 Series

N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
STMicroelectronics STD12N50M2	380 mOhm	500 V	4 V	30 V	N-Channel	Surface Mount	550 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 A	-55 °C	150 °C	DPAK	10 V	85 W	MOSFET (Metal Oxide)
STMicroelectronics STD12N60DM6	390 mOhm	600 V	4.75 V	25 V	N-Channel	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	10 A	-55 °C	150 °C	TO-252 (DPAK)			MOSFET (Metal Oxide)	17 nC	90 W	508 pF
STMicroelectronics STD12N50DM2	350 mOhm	500 V	5 V	25 V	N-Channel	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	11 A	-55 °C	150 °C	DPAK	10 V	110 W	MOSFET (Metal Oxide)			628 pF	16 nC
STMicroelectronics STD127DT4						Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3				DPAK								NPN	4 A	35 W	400 V	150 °C	10	1.3 V	250 µA
STMicroelectronics STD12NF06LT4	100 mOhm	60 V	2 V	16 V	N-Channel	Surface Mount	350 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 A	-55 °C	175 ░C	DPAK			MOSFET (Metal Oxide)		42.8 W		10 nC									10 V	5 V
STMicroelectronics STD12NF06T4	100 mOhm	60 V	4 V	20 V	N-Channel	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	12 A	-55 °C	175 ░C	DPAK	10 V		MOSFET (Metal Oxide)			315 pF	12 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.72
		10	$ 1.43
		100	$ 1.14
		500	$ 0.96
		1000	$ 0.82
	Digi-Reel®	1	$ 1.72
		10	$ 1.43
		100	$ 1.14
		500	$ 0.96
		1000	$ 0.82
	Tape & Reel (TR)	2500	$ 0.75

Description

General part information

STD12NF06LT4 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

STD12N50DM2

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STD12N50DM2

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Technical Specifications

STD12NF06LT4 Series

Pricing

Description

STD12NF06LT4 Series

Documents

Datasheet

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STD12NF06LT4 Series