Zenode.ai Logo
Beta
K
STD12N60DM6 - ROHM RBR10NS40AFHTL

STD12N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 345 MOHM TYP., 10 A MDMESH DM6 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

STD12N60DM6 - ROHM RBR10NS40AFHTL

STD12N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 345 MOHM TYP., 10 A MDMESH DM6 POWER MOSFET IN A DPAK PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD12N60DM6
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds508 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)90 W
Rds On (Max) @ Id, Vgs390 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.02
10$ 1.68
100$ 1.33
500$ 1.13
1000$ 0.96
Digi-Reel® 1$ 2.02
10$ 1.68
100$ 1.33
500$ 1.13
1000$ 0.96
Tape & Reel (TR) 2500$ 0.91
5000$ 0.88
NewarkEach 1$ 2.47
10$ 2.05
100$ 1.60
500$ 1.40
1000$ 1.33
2500$ 1.32
5000$ 1.31

Description

General part information

STD12NF06LT4 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.