APTC90H12T2G

Obsolete

Microsemi Corporation

MOSFET 4N-CH 900V 30A SP2

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

MOSFET 4N-CH 900V 30A SP2

Technical Specifications

Parameters and characteristics for this part

Specification	APTC90H12T2G

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	30 A
Gate Charge (Qg) (Max) @ Vgs [Max]	270 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP2
Power - Max [Max]	250 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	SP2
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Vgs(th) (Max) @ Id [Max]	Configuration
Microsemi Corporation APTC90DDA12T1G	120 mOhm	2 N Channel (Dual Buck Chopper)	250 W	3.5 V	SP1	MOSFET (Metal Oxide)	30 A	270 nC	6800 pF	150 °C	-40 °C	SP1	Chassis Mount
Microsemi Corporation APTC90DSK12T1G	120 mOhm	2 N Channel (Dual Buck Chopper)	250 W	3.5 V	SP1	MOSFET (Metal Oxide)	30 A	270 nC	6800 pF	150 °C	-40 °C	SP1	Chassis Mount
Microsemi Corporation APTC90TAM60TPG	60 mOhm	6 N-Channel (3-Phase Bridge)	462 W		SP6-P	MOSFET (Metal Oxide)	59 A	540 nC	13600 pF	150 °C	-40 °C	SP6	Chassis Mount	3.5 V
Microsemi Corporation APTC90H12T2G	120 mOhm		250 W	3.5 V	SP2	MOSFET (Metal Oxide)	30 A	270 nC	6800 pF	150 °C	-40 °C	SP2	Chassis Mount		4 N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 900V 30A 250W Chassis Mount SP2

Technical documentation and resources