APTC90TAM60TPG

Obsolete

Microsemi Corporation

MOSFET 6N-CH 900V 59A SP6-P

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Obsolete

Microsemi Corporation

MOSFET 6N-CH 900V 59A SP6-P

Technical Specifications

Parameters and characteristics for this part

Specification	APTC90TAM60TPG

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	59 A
Gate Charge (Qg) (Max) @ Vgs [Max]	540 nC
Input Capacitance (Ciss) (Max) @ Vds	13600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP6
Power - Max [Max]	462 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SP6-P
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Vgs(th) (Max) @ Id [Max]	Configuration
Microsemi Corporation APTC90DDA12T1G	120 mOhm	2 N Channel (Dual Buck Chopper)	250 W	3.5 V	SP1	MOSFET (Metal Oxide)	30 A	270 nC	6800 pF	150 °C	-40 °C	SP1	Chassis Mount
Microsemi Corporation APTC90DSK12T1G	120 mOhm	2 N Channel (Dual Buck Chopper)	250 W	3.5 V	SP1	MOSFET (Metal Oxide)	30 A	270 nC	6800 pF	150 °C	-40 °C	SP1	Chassis Mount
Microsemi Corporation APTC90TAM60TPG	60 mOhm	6 N-Channel (3-Phase Bridge)	462 W		SP6-P	MOSFET (Metal Oxide)	59 A	540 nC	13600 pF	150 °C	-40 °C	SP6	Chassis Mount	3.5 V
Microsemi Corporation APTC90H12T2G	120 mOhm		250 W	3.5 V	SP2	MOSFET (Metal Oxide)	30 A	270 nC	6800 pF	150 °C	-40 °C	SP2	Chassis Mount		4 N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 900V 59A 462W Chassis Mount SP6-P

Technical documentation and resources

No documents available