MOSFET 2N-CH 900V 30A SP1
| Part | Rds On (Max) @ Id, Vgs | Configuration | Power - Max [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Mounting Type | Vgs(th) (Max) @ Id [Max] | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | 120 mOhm | 2 N Channel (Dual Buck Chopper) | 250 W | 3.5 V | SP1 | MOSFET (Metal Oxide) | 30 A | 270 nC | 6800 pF | 150 °C | -40 °C | SP1 | Chassis Mount | ||
Microsemi Corporation | 120 mOhm | 2 N Channel (Dual Buck Chopper) | 250 W | 3.5 V | SP1 | MOSFET (Metal Oxide) | 30 A | 270 nC | 6800 pF | 150 °C | -40 °C | SP1 | Chassis Mount | ||
Microsemi Corporation | 60 mOhm | 6 N-Channel (3-Phase Bridge) | 462 W | SP6-P | MOSFET (Metal Oxide) | 59 A | 540 nC | 13600 pF | 150 °C | -40 °C | SP6 | Chassis Mount | 3.5 V | ||
Microsemi Corporation | 120 mOhm | 250 W | 3.5 V | SP2 | MOSFET (Metal Oxide) | 30 A | 270 nC | 6800 pF | 150 °C | -40 °C | SP2 | Chassis Mount | 4 N-Channel |