IPB042N10N3GATMA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 100 A, 0.0036 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IPB042N10N3GATMA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 100 A, 0.0036 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB042N10N3GATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPB042 Series

Part	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Infineon Technologies IPB042N10N3GATMA1	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	214 W	4.2 mOhm	MOSFET (Metal Oxide)	Surface Mount	N-Channel	117 nC	6 V 10 V	20 V	100 A	-55 °C	175 ░C	3.5 V
Infineon Technologies IPB042N10N3GE8187ATMA1	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	214 W	4.2 mOhm	MOSFET (Metal Oxide)	Surface Mount	N-Channel	117 nC	6 V 10 V	20 V	100 A	-55 °C	175 ░C	3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.75
		10	$ 2.46
		100	$ 1.72
		500	$ 1.41
	Digi-Reel®	1	$ 3.75
		10	$ 2.46
		100	$ 1.72
		500	$ 1.41
	Tape & Reel (TR)	1000	$ 1.28

Description

General part information

IPB042 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources