POWER MOSFET, N CHANNEL, 100 V, 100 A, 0.0036 OHM, TO-263 (D2PAK), SURFACE MOUNT
| Part | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Technology | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 214 W | 4.2 mOhm | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 117 nC | 6 V 10 V | 20 V | 100 A | -55 °C | 175 ░C | 3.5 V |
Infineon Technologies | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 214 W | 4.2 mOhm | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 117 nC | 6 V 10 V | 20 V | 100 A | -55 °C | 175 ░C | 3.5 V |