IPB042N10N3GE8187ATMA1

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Infineon Technologies

MOSFET N-CH 100V 100A D2PAK

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Infineon Technologies

MOSFET N-CH 100V 100A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB042N10N3GE8187ATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Infineon Technologies IPB042N10N3GATMA1	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	214 W	4.2 mOhm	MOSFET (Metal Oxide)	Surface Mount	N-Channel	117 nC	6 V 10 V	20 V	100 A	-55 °C	175 ░C	3.5 V
Infineon Technologies IPB042N10N3GE8187ATMA1	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	214 W	4.2 mOhm	MOSFET (Metal Oxide)	Surface Mount	N-Channel	117 nC	6 V 10 V	20 V	100 A	-55 °C	175 ░C	3.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources