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IPP60R099P6XKSA1 - TO-220-3

IPP60R099P6XKSA1

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Infineon Technologies

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

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IPP60R099P6XKSA1 - TO-220-3

IPP60R099P6XKSA1

Active
Infineon Technologies

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R099P6XKSA1
Current - Continuous Drain (Id) @ 25°C37.9 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]70 nC
Input Capacitance (Ciss) (Max) @ Vds3330 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)278 W
Rds On (Max) @ Id, Vgs99 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.27
50$ 2.42
100$ 2.26
500$ 2.21
NewarkEach 1$ 4.14
10$ 3.93
25$ 3.81
50$ 3.77
100$ 3.71

Description

General part information

IPP60R099 Series

InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Documents

Technical documentation and resources