IPP60R099 Series

Catalog

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

Part	Supplier Device Package	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPP60R099P7XKSA1	PG-TO220-3	TO-220-3	Through Hole	600 V	4 V	-55 °C	150 °C	N-Channel	1952 pF	99 mOhm	31 A	10 V	MOSFET (Metal Oxide)	20 V	45 nC	117 W
Infineon Technologies IPP60R099P6XKSA1	PG-TO220-3	TO-220-3	Through Hole	600 V	4.5 V	-55 °C	150 °C	N-Channel		99 mOhm	37.9 A	10 V	MOSFET (Metal Oxide)	20 V	70 nC	278 W	3330 pF
Infineon Technologies IPP60R099CPXKSA1	PG-TO220-3	TO-220-3	Through Hole	650 V	3.5 V	-55 °C	150 °C	N-Channel		99 mOhm	31 A	10 V	MOSFET (Metal Oxide)	20 V		255 W	2800 pF	80 nC