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IPP60R099P7XKSA1 - ONSEMI ISL9V3040P3

IPP60R099P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

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IPP60R099P7XKSA1 - ONSEMI ISL9V3040P3

IPP60R099P7XKSA1

Active
Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 99 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R099P7XKSA1
Current - Continuous Drain (Id) @ 25°C31 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1952 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)117 W
Rds On (Max) @ Id, Vgs99 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 3.82
10$ 3.11
50$ 2.12
100$ 1.97
200$ 1.85
DigikeyTube 1$ 4.60
10$ 3.05
100$ 2.16
500$ 1.78
1000$ 1.69
NewarkEach 1$ 4.14
10$ 3.37
25$ 2.30
50$ 2.23
100$ 2.14
250$ 1.96
500$ 1.76

Description

General part information

IPP60R099 Series

The600V CoolMOS™ P7is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources