DMNH4005SCTQ
ActiveDiodes Inc
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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DMNH4005SCTQ
ActiveDiodes Inc
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMNH4005SCTQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 150 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 48 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2846 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 165 W |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 50 | $ 1.46 | |
Description
General part information
DMNH4005SPSQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.
Documents
Technical documentation and resources