DMNH4005SPSQ Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Package / Case	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMNH4005SCTQ	3 V	TO-220-3	N-Channel	Through Hole	48 nC	4 mOhm	20 V	10 V	150 A	MOSFET (Metal Oxide)	2846 pF	TO-220-3	165 W	-55 °C	175 ░C	40 V
Diodes Inc DMNH4005SPSQ-13	3 V	8-PowerTDFN	N-Channel	Surface Mount	48 nC	4 mOhm	20 V	10 V		MOSFET (Metal Oxide)		PowerDI5060-8	2.8 W	-55 °C	175 ░C	40 V	2847 pF

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Low RDS(ON)– Minimizes Power Losses

• Low Qg– Minimizes Switching Losses

• <1.1mm Package Profile – Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMNH4005SPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.