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DMNH4005SPSQ-13 - DMNH4005SPSQ-13

DMNH4005SPSQ-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMNH4005SPSQ-13 - DMNH4005SPSQ-13

DMNH4005SPSQ-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMNH4005SPSQ-13
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]48 nC
Input Capacitance (Ciss) (Max) @ Vds2847 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]2.8 W
Rds On (Max) @ Id, Vgs4 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.21
10$ 0.99
100$ 0.77
500$ 0.65
1000$ 0.53
Digi-Reel® 1$ 1.21
10$ 0.99
100$ 0.77
500$ 0.65
1000$ 0.53
Tape & Reel (TR) 2500$ 0.50
5000$ 0.47

Description

General part information

DMNH4005SPSQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.