IPSA70R600CEAKMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; IPAK SL ISO-STANDOFF PACKAGE; 600 MOHM; PRICE/PERFORMANCE
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IPSA70R600CEAKMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 700 V ; IPAK SL ISO-STANDOFF PACKAGE; 600 MOHM; PRICE/PERFORMANCE
Technical Specifications
Parameters and characteristics for this part
| Specification | IPSA70R600CEAKMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.5 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 474 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 86 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Supplier Device Package | PG-TO251-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPSA70 Series
CoolMOS™ CEis a technology platform of Infineon´s market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers600V, 650V and 700Vdevices targeting low power chargers for mobile devices and power tools,LCD,LED TVandLED lightingapplications.
Documents
Technical documentation and resources