IPSA70R900P7SAKMA1

Obsolete

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 700 V ; IPAK SL ISO-STANDOFF PACKAGE; 900 MOHM; PRICE/PERFORMANCE

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IPSA70R900P7SAKMA1

Obsolete

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 700 V ; IPAK SL ISO-STANDOFF PACKAGE; 900 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPSA70R900P7SAKMA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	211 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	30.5 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3.5 V

IPSA70 Series

Part	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
Infineon Technologies IPSA70R360P7SAKMA1	59.5 W	517 pF	360 mOhm	MOSFET (Metal Oxide)	10 V	N-Channel	12.5 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	16.4 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA
Infineon Technologies IPSA70R900P7SAKMA1	30.5 W		900 mOhm	MOSFET (Metal Oxide)	10 V	N-Channel	6 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3		150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA	6.8 nC	211 pF
Infineon Technologies IPSA70R450P7SAKMA1	50 W	424 pF	450 mOhm	MOSFET (Metal Oxide)	10 V	N-Channel	10 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	13.1 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA
Infineon Technologies IPSA70R750P7SAKMA1	34.7 W	306 pF		MOSFET (Metal Oxide)	10 V	N-Channel	6.5 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	8.3 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA			750 mOhm
Infineon Technologies IPSA70R600CEAKMA1		474 pF	600 mOhm	MOSFET (Metal Oxide)	10 V	N-Channel	10.5 A	700 V	20 V	3.5 V	Through Hole	PG-TO251-3		150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA	22 nC			86 W
Infineon Technologies IPSA70R1K2P7SAKMA1		174 pF	1.2 Ohm	MOSFET (Metal Oxide)	10 V	N-Channel	4.5 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	4.8 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA				25 W
Infineon Technologies IPSA70R1K4P7SAKMA1	22.7 W	158 pF	1.4 Ohm	MOSFET (Metal Oxide)	10 V	N-Channel	4 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	4.7 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPSA70 Series

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the700V CoolMOS™ P7superjunction MOSFET series addresses the low power SMPS market, such as mobile phonechargersor notebookadaptersby offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

Documents

Technical documentation and resources