IPSA70R1K4P7SAKMA1

Obsolete

Infineon Technologies

MOSFET N-CH 700V 4A TO251-3

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IPSA70R1K4P7SAKMA1

Obsolete

Infineon Technologies

MOSFET N-CH 700V 4A TO251-3

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPSA70R1K4P7SAKMA1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.7 nC
Input Capacitance (Ciss) (Max) @ Vds	158 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	22.7 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3.5 V

IPSA70 Series

Part	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
Infineon Technologies IPSA70R360P7SAKMA1	59.5 W	517 pF	360 mOhm	MOSFET (Metal Oxide)	10 V	N-Channel	12.5 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	16.4 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA
Infineon Technologies IPSA70R900P7SAKMA1	30.5 W		900 mOhm	MOSFET (Metal Oxide)	10 V	N-Channel	6 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3		150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA	6.8 nC	211 pF
Infineon Technologies IPSA70R450P7SAKMA1	50 W	424 pF	450 mOhm	MOSFET (Metal Oxide)	10 V	N-Channel	10 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	13.1 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA
Infineon Technologies IPSA70R750P7SAKMA1	34.7 W	306 pF		MOSFET (Metal Oxide)	10 V	N-Channel	6.5 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	8.3 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA			750 mOhm
Infineon Technologies IPSA70R600CEAKMA1		474 pF	600 mOhm	MOSFET (Metal Oxide)	10 V	N-Channel	10.5 A	700 V	20 V	3.5 V	Through Hole	PG-TO251-3		150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA	22 nC			86 W
Infineon Technologies IPSA70R1K2P7SAKMA1		174 pF	1.2 Ohm	MOSFET (Metal Oxide)	10 V	N-Channel	4.5 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	4.8 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA				25 W
Infineon Technologies IPSA70R1K4P7SAKMA1	22.7 W	158 pF	1.4 Ohm	MOSFET (Metal Oxide)	10 V	N-Channel	4 A	700 V	16 V	3.5 V	Through Hole	PG-TO251-3	4.7 nC	150 °C	-40 °C	IPAK TO-251-3 Short Leads TO-251AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPSA70 Series

N-Channel 700 V 4A (Tc) 22.7W (Tc) Through Hole PG-TO251-3

Documents

Technical documentation and resources

No documents available