IPI076N12N3GAKSA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; I2PAK TO-262 PACKAGE; 7.6 MOHM;
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IPI076N12N3GAKSA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; I2PAK TO-262 PACKAGE; 7.6 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPI076N12N3GAKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 101 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 6640 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 188 W |
| Rds On (Max) @ Id, Vgs | 7.6 mOhm |
| Supplier Device Package | PG-TO262-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.74 | |
| 10 | $ 1.80 | |||
| 100 | $ 1.30 | |||
Description
General part information
IPI076 Series
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.