IPI076 Series

Catalog

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; I2PAK TO-262 PACKAGE; 7.6 MOHM;

Part	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPI076N12N3GAKSA1	MOSFET (Metal Oxide)	120 V	188 W	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	-55 °C	175 ░C	7.6 mOhm	PG-TO262-3	N-Channel	101 nC	6640 pF	10 V	4 V	20 V	100 A
Infineon Technologies IPI076N15N5AKSA1	MOSFET (Metal Oxide)	150 V	214 W	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	-55 °C	175 ░C	7.6 mOhm	PG-TO262-3	N-Channel			8 V 10 V	4.6 V	20 V	112 A	61 nC	4700 pF