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IPI076N15N5AKSA1 - INFINEON IPI076N15N5AKSA1

IPI076N15N5AKSA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; I2PAK TO-262 PACKAGE; 7.6 MOHM;

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IPI076N15N5AKSA1 - INFINEON IPI076N15N5AKSA1

IPI076N15N5AKSA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; I2PAK TO-262 PACKAGE; 7.6 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI076N15N5AKSA1
Current - Continuous Drain (Id) @ 25°C112 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC
Input Capacitance (Ciss) (Max) @ Vds4700 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)214 W
Rds On (Max) @ Id, Vgs7.6 mOhm
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.37
10$ 4.04
50$ 2.82
100$ 2.57
500$ 2.14
1000$ 2.10
NewarkEach 1$ 5.76
10$ 5.66
25$ 3.04
50$ 2.90
100$ 2.77
250$ 2.58
500$ 2.38

Description

General part information

IPI076 Series

OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in RDS(on)(up to 25% compared to the next best alternative in SuperSO8) and Qrrwithout compromising FOMgdand FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Qrr= 26 nC in SuperSO8) increases commutation ruggedness.

Documents

Technical documentation and resources