STW12NK80Z

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STMicroelectronics

N-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN TO-247 PACKAGE

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STW12NK80Z

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STMicroelectronics

N-CHANNEL 800 V, 0.65 OHM, 10.5 A ZENER PROTECTED SUPERMESH(TM) POWER MOSFET IN TO-247 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW12NK80Z	STW12 Series

Current - Continuous Drain (Id) @ 25°C	10.5 A	7 - 11 A
Drain to Source Voltage (Vdss)	800 V	800 - 1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	152 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC	87 nC
Input Capacitance (Ciss) (Max) @ Vds	2620 pF	1360 - 3500 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max) [Max]	190 W	190 - 250 W
Rds On (Max) @ Id, Vgs	750 mOhm	1.9 - 880 Ohm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	4.5 V	4.5 - 5 V

STW12 Series

N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STW12N150K5	250 W	Through Hole	10 V	MOSFET (Metal Oxide)	7 A	1360 pF	N-Channel	1.9 Ohm	30 V	1500 V	5 V	TO-247-3	-55 °C	150 °C	TO-247-3
STMicroelectronics STW12NK80Z	190 W	Through Hole	10 V	MOSFET (Metal Oxide)	10.5 A	2620 pF	N-Channel	750 mOhm	30 V	800 V	4.5 V	TO-247-3	-55 °C	150 °C	TO-247-3	87 nC
STMicroelectronics STW12NK90Z	230 W	Through Hole	10 V	MOSFET (Metal Oxide)	11 A	3500 pF	N-Channel	880 mOhm	30 V	900 V	4.5 V	TO-247-3	-55 °C	150 °C	TO-247-3		152 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.59
		30	$ 2.85
		120	$ 2.82
		510	$ 2.80
Newark	Each	1	$ 4.36
		10	$ 4.33
		120	$ 3.43
		510	$ 3.43
		1020	$ 3.31
		2520	$ 2.75
		5010	$ 2.62

Description

General part information

STW12 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Documents

Technical documentation and resources

Datasheet

STW12NK80Z

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STW12NK80Z

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Technical Specifications

STW12 Series

Pricing

Description

STW12 Series

Documents

Datasheet

Datasheet

Product Change Notice EN

Technical Data Sheet EN

TN1378

UM1575

AN2344

DS3339

AN2842

TN1225

AN4337

TN1224

TN1156

AN4250

Technical Specifications

STW12 Series