STW12NK90Z

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STMicroelectronics

N-CHANNEL 900 V, 0.72 OHM TYP., 11 A SUPERMESH POWER MOSFET IN TO-247 PACKAGE

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STW12NK90Z

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STMicroelectronics

N-CHANNEL 900 V, 0.72 OHM TYP., 11 A SUPERMESH POWER MOSFET IN TO-247 PACKAGE

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Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	600	$ 2.78
		3000	$ 2.78
Digikey	Tube	1	$ 6.48
		30	$ 3.50
		120	$ 3.31
		510	$ 2.92
		1020	$ 2.81

Description

General part information

STW12 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Documents

Technical documentation and resources

Datasheet

Specification	STW12NK90Z	STW12 Series

Current - Continuous Drain (Id) @ 25°C	11 A	7 - 11 A
Drain to Source Voltage (Vdss)	900 V	800 - 1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	152 nC	152 nC
Gate Charge (Qg) (Max) @ Vgs	-	87 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF	1360 - 3500 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max) [Max]	230 W	190 - 250 W
Rds On (Max) @ Id, Vgs	880 mOhm	1.9 - 880 Ohm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	30 V	30 V
Vgs(th) (Max) @ Id	4.5 V	4.5 - 5 V

Part	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STW12N150K5	250 W	Through Hole	10 V	MOSFET (Metal Oxide)	7 A	1360 pF	N-Channel	1.9 Ohm	30 V	1500 V	5 V	TO-247-3	-55 °C	150 °C	TO-247-3
STMicroelectronics STW12NK80Z	190 W	Through Hole	10 V	MOSFET (Metal Oxide)	10.5 A	2620 pF	N-Channel	750 mOhm	30 V	800 V	4.5 V	TO-247-3	-55 °C	150 °C	TO-247-3	87 nC
STMicroelectronics STW12NK90Z	230 W	Through Hole	10 V	MOSFET (Metal Oxide)	11 A	3500 pF	N-Channel	880 mOhm	30 V	900 V	4.5 V	TO-247-3	-55 °C	150 °C	TO-247-3		152 nC

STW12NK90Z

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STW12NK90Z

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Pricing

Description

STW12 Series

Documents

Datasheet

Datasheet

Product Change Notice EN

AN2623

TN1378

TN1156

AN2344

DS3364

TN1225

TN1224

UM1575

AN4337

AN4250

AN2842

Technical Specifications

STW12 Series