STW12 Series

N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package

Catalog

N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STW12N150K5	250 W	Through Hole	10 V	MOSFET (Metal Oxide)	7 A	1360 pF	N-Channel	1.9 Ohm	30 V	1500 V	5 V	TO-247-3	-55 °C	150 °C	TO-247-3
STMicroelectronics STW12NK80Z	190 W	Through Hole	10 V	MOSFET (Metal Oxide)	10.5 A	2620 pF	N-Channel	750 mOhm	30 V	800 V	4.5 V	TO-247-3	-55 °C	150 °C	TO-247-3	87 nC
STMicroelectronics STW12NK90Z	230 W	Through Hole	10 V	MOSFET (Metal Oxide)	11 A	3500 pF	N-Channel	880 mOhm	30 V	900 V	4.5 V	TO-247-3	-55 °C	150 °C	TO-247-3		152 nC

Catalog

N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.