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DMT3009LDT-7 - V-DFN3030-8

DMT3009LDT-7

Active
Diodes Inc

MOSFET, DUAL, N-CH, 30V, 30A ROHS COMPLIANT: YES

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DMT3009LDT-7 - V-DFN3030-8

DMT3009LDT-7

Active
Diodes Inc

MOSFET, DUAL, N-CH, 30V, 30A ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT3009LDT-7
Configuration2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC
Input Capacitance (Ciss) (Max) @ Vds1500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-VDFN Exposed Pad
Power - Max [Max]1.2 W
Rds On (Max) @ Id, Vgs11.1 mOhm
Supplier Device PackageV-DFN3030-8 (Type K)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.87
10$ 0.71
100$ 0.55
500$ 0.47
1000$ 0.38
Digi-Reel® 1$ 0.87
10$ 0.71
100$ 0.55
500$ 0.47
1000$ 0.38
Tape & Reel (TR) 3000$ 0.33
NewarkEach (Supplied on Cut Tape) 1$ 1.37
10$ 0.89
25$ 0.79
50$ 0.69
100$ 0.60
250$ 0.54
500$ 0.47
1000$ 0.43

Description

General part information

DMT3009LFVW Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.