Technical Specifications
Parameters and characteristics for this part
| Specification | DMT3009LDT-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Power - Max [Max] | 1.2 W |
| Rds On (Max) @ Id, Vgs | 11.1 mOhm |
| Supplier Device Package | V-DFN3030-8 (Type K) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMT3009LFVW Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources
