DMT3009LFVW-7

Active

Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques +1

DMT3009LFVW-7

Active

Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT3009LFVW-7

Current - Continuous Drain (Id) @ 25°C	12 A, 50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	3.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	823 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.3 W
Rds On (Max) @ Id, Vgs [Max]	11 mOhm
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMT3009LFVW Series

30V N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	FET Type	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Configuration	Rds On (Max) @ Id, Vgs	Power - Max [Max]
Diodes Inc DMT3009LFVW-7	30 V	3.8 V	10 V	8-PowerVDFN	N-Channel	20 V	MOSFET (Metal Oxide)	11 mOhm	12 nC	-55 °C	150 °C	PowerDI3333-8 (SWP) Type UX	823 pF	Surface Mount Wettable Flank	2.3 W	12 A 50 A	3 V
Diodes Inc DMT3009LDT-7	30 V			8-VDFN Exposed Pad			MOSFET (Metal Oxide)			-55 °C	150 °C	V-DFN3030-8 (Type K)	1500 pF	Surface Mount		30 A	3 V	20 nC	2 N-Channel (Dual) Asymmetrical	11.1 mOhm	1.2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.59
		10	$ 0.51
		100	$ 0.35
		500	$ 0.29
		1000	$ 0.25
	Digi-Reel®	1	$ 0.59
		10	$ 0.51
		100	$ 0.35
		500	$ 0.29
		1000	$ 0.25
	Tape & Reel (TR)	2000	$ 0.22
		6000	$ 0.21
		10000	$ 0.20

Description

General part information

DMT3009LFVW Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.