DMT3009LFVW Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	FET Type	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Configuration	Rds On (Max) @ Id, Vgs	Power - Max [Max]
Diodes Inc DMT3009LFVW-7	30 V	3.8 V	10 V	8-PowerVDFN	N-Channel	20 V	MOSFET (Metal Oxide)	11 mOhm	12 nC	-55 °C	150 °C	PowerDI3333-8 (SWP) Type UX	823 pF	Surface Mount Wettable Flank	2.3 W	12 A 50 A	3 V
Diodes Inc DMT3009LDT-7	30 V			8-VDFN Exposed Pad			MOSFET (Metal Oxide)			-55 °C	150 °C	V-DFN3030-8 (Type K)	1500 pF	Surface Mount		30 A	3 V	20 nC	2 N-Channel (Dual) Asymmetrical	11.1 mOhm	1.2 W

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – ensures on state losses are minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.