STW56N65M2-4

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STMicroelectronics

TRANS MOSFET N-CH 650V 49A 4-PIN(4+TAB) TO-247 TUBE

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STMicroelectronics

TRANS MOSFET N-CH 650V 49A 4-PIN(4+TAB) TO-247 TUBE

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Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	600	$ 6.54

General part information

N-Channel 650 V 49A (Tc) 358W (Tc) Through Hole TO-247-4

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	STW56N65M2-4	STW56 Series

Current - Continuous Drain (Id) @ 25°C	49 A	49 - 52 A
Drain to Source Voltage (Vdss)	650 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC	93 nC
Gate Charge (Qg) (Max) @ Vgs	-	91 nC
Gate Charge (Qg) (Max) @ Vgs	-	90 nC
Input Capacitance (Ciss) (Max) @ Vds	3900 pF	3750 - 3900 pF
Input Capacitance (Ciss) (Max) @ Vds	-	4100 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	TO-247-4	TO-247-4, TO-247-3
Power Dissipation (Max)	-	350 - 360 W
Power Dissipation (Max) [Max]	358 W	358 W
Rds On (Max) @ Id, Vgs	-	55 - 60 mOhm
Rds On (Max) @ Id, Vgs [Max]	62 mOhm	62 mOhm
Supplier Device Package	TO-247-4	TO-247-4, TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	4 V	4 - 5 V

TRANS MOSFET N-CH 650V 49A 4-PIN(4+TAB) TO-247 TUBE

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature	Package / Case	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW56N65M2-4	TO-247-4	358 W	93 nC	25 V	150 °C	TO-247-4	4 V	N-Channel	62 mOhm	49 A	Through Hole	10 V	3900 pF	MOSFET (Metal Oxide)	650 V
STMicroelectronics STW56N60M2-4	TO-247-4			25 V	150 °C	TO-247-4	4 V	N-Channel		52 A	Through Hole	10 V	3750 pF	MOSFET (Metal Oxide)	600 V	91 nC	350 W	55 mOhm
STMicroelectronics STW56N60DM2	TO-247-3			25 V		TO-247-3	5 V	N-Channel		50 A	Through Hole	10 V		MOSFET (Metal Oxide)	600 V		360 W	60 mOhm	-55 °C	150 °C	4100 pF	90 nC