STW56N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 0.052 OHM TYP., 50 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsProduct Change Notice EN Datasheet

STW56N60DM2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.052 OHM TYP., 50 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW56N60DM2

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STW56N60DM2 Series

N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW56N60DM2	60 mOhm	TO-247-3	TO-247-3	600 V	25 V	360 W	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	5 V	10 V	4100 pF	50 A	90 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 11.29
		30	$ 9.01
		120	$ 8.06
		510	$ 7.12
		1020	$ 6.40

Description

General part information

STW56N60DM2 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet