STW56N60M2-4

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STMicroelectronics

N-CHANNEL 600 V, 45 MOHM TYP., 52 A MDMESH M2 POWER MOSFET IN A TO247-4 PACKAGE

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DocumentsDatasheet Technical Data Sheet EN +26

STW56N60M2-4

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STMicroelectronics

N-CHANNEL 600 V, 45 MOHM TYP., 52 A MDMESH M2 POWER MOSFET IN A TO247-4 PACKAGE

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DocumentsDatasheet Technical Data Sheet EN +26

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW56N60M2-4	STW56 Series

Current - Continuous Drain (Id) @ 25°C	52 A	49 - 52 A
Drain to Source Voltage (Vdss)	600 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	93 nC
Gate Charge (Qg) (Max) @ Vgs	-	90 nC
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	91 nC	91 nC
Input Capacitance (Ciss) (Max) @ Vds	3750 pF	3750 - 3900 pF
Input Capacitance (Ciss) (Max) @ Vds	-	4100 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Operating Temperature	-	-55 °C
Operating Temperature	-	150 °C
Package / Case	TO-247-4	TO-247-4, TO-247-3
Power Dissipation (Max)	350 W	350 - 360 W
Power Dissipation (Max)	-	358 W
Rds On (Max) @ Id, Vgs	55 mOhm	55 - 60 mOhm
Rds On (Max) @ Id, Vgs	-	62 mOhm
Supplier Device Package	TO-247-4	TO-247-4, TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	4 V	4 - 5 V

STW56 Series

TRANS MOSFET N-CH 650V 49A 4-PIN(4+TAB) TO-247 TUBE

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature	Package / Case	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW56N65M2-4	TO-247-4	358 W	93 nC	25 V	150 °C	TO-247-4	4 V	N-Channel	62 mOhm	49 A	Through Hole	10 V	3900 pF	MOSFET (Metal Oxide)	650 V
STMicroelectronics STW56N60M2-4	TO-247-4			25 V	150 °C	TO-247-4	4 V	N-Channel		52 A	Through Hole	10 V	3750 pF	MOSFET (Metal Oxide)	600 V	91 nC	350 W	55 mOhm
STMicroelectronics STW56N60DM2	TO-247-3			25 V		TO-247-3	5 V	N-Channel		50 A	Through Hole	10 V		MOSFET (Metal Oxide)	600 V		360 W	60 mOhm	-55 °C	150 °C	4100 pF	90 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.72
		30	$ 5.09
		120	$ 4.79
		510	$ 4.43
Newark	Each	1	$ 11.93
		10	$ 10.54
		25	$ 9.15
		50	$ 7.75
		100	$ 7.47
		250	$ 7.19

Description

General part information

STW56 Series

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

STW56N60M2-4

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STW56N60M2-4

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Technical Specifications

STW56 Series

Pricing

Description

STW56 Series

Documents

Datasheet

Technical Data Sheet EN

TN1225

AN4406

AN4250

AN4337

TN1156

AN2842

DS10508

AN2344

TN1378

AN4720

TN1224

UM1575

AN4407

AN4742

AN5318

AN4829

Technical Specifications

STW56 Series