CSD16321Q5T

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.6 MOHM

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CSD16321Q5T

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.6 MOHM

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Description Specifications Series Pricing CAD Documents

Description

General part information

CSD16321 Series

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16321Q5T

Current - Continuous Drain (Id) (Ta)	29 A
Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	3 V
Drive Voltage (Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Max)	19 nC
Input Capacitance (Ciss) (Max)	3100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-VSON-CLIP
Package Width	6 mm
Power Dissipation (Max)	3.1 W, 113 W
Rds On (Max)	2.4 mOhm, 2.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	10 V
Vgs(th) (Max)	1.4 V

CSD16321 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Part	Vgs(th) (Max)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Package Width	Package Length	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Vgs (Max) Negative	Vgs (Max) Positive	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Rds On (Max)	Power Dissipation (Max)
Texas Instruments CSD16321Q5	1.4 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	3 V	8 V	8-VSON-CLIP	6 mm	5 mm	-55 °C	150 °C	3100 pF	100 A	31 A	-8 V	10 V	8-PowerTDFN	25 V	19 nC	2.4 mOhm 2.4 mOhm	3.1 W
Texas Instruments CSD16321Q5T	1.4 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	3 V	8 V	8-VSON-CLIP	6 mm	5 mm	-55 °C	150 °C	3100 pF	100 A	29 A	-8 V	10 V	8-PowerTDFN	25 V	19 nC	2.4 mOhm 2.4 mOhm	3.1 W 113 W