CSD16321 Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Part	Vgs(th) (Max)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Package Width	Package Length	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Vgs (Max) Negative	Vgs (Max) Positive	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Rds On (Max)	Power Dissipation (Max)
Texas Instruments CSD16321Q5	1.4 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	3 V	8 V	8-VSON-CLIP	6 mm	5 mm	-55 °C	150 °C	3100 pF	100 A	31 A	-8 V	10 V	8-PowerTDFN	25 V	19 nC	2.4 mOhm 2.4 mOhm	3.1 W
Texas Instruments CSD16321Q5T	1.4 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	3 V	8 V	8-VSON-CLIP	6 mm	5 mm	-55 °C	150 °C	3100 pF	100 A	29 A	-8 V	10 V	8-PowerTDFN	25 V	19 nC	2.4 mOhm 2.4 mOhm	3.1 W 113 W

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm

Description

This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.