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STL100N10F7 - 8-PowerVDFN

STL100N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.0062 OHM TYP., 19 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

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Search across all available documentation for this part.

DocumentsDS9250+16
STL100N10F7 - 8-PowerVDFN

STL100N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.0062 OHM TYP., 19 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

Deep-Dive with AI

DocumentsDS9250+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL100N10F7
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC
Input Capacitance (Ciss) (Max) @ Vds5680 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)5 W, 100 W
Rds On (Max) @ Id, Vgs7.3 mOhm
Supplier Device PackagePowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.85
10$ 1.94
100$ 1.36
500$ 1.14
Digi-Reel® 1$ 2.85
10$ 1.94
100$ 1.36
500$ 1.14
Tape & Reel (TR) 3000$ 0.93
NewarkEach (Supplied on Full Reel) 3000$ 1.74

Description

General part information

STL100N10F7 Series

This device is an N-channel Power MOSFET developed using the 7thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.