STL100N10F7 Series

N-channel 100 V, 0.0062 Ohm typ., 19 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Catalog

N-channel 100 V, 0.0062 Ohm typ., 19 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STL100N10F7	7.3 mOhm	PowerFlat™ (5x6)	MOSFET (Metal Oxide)	10 V	5680 pF	N-Channel	-55 °C	175 ░C	80 nC	5 W 100 W	4 V	100 V	8-PowerVDFN	20 V	Surface Mount
STMicroelectronics STL100N1VH5	3 mOhm	PowerFlat™ (5x6)	MOSFET (Metal Oxide)	2.5 V 4.5 V		N-Channel	-55 °C	150 °C		60 W	500 mV	12 V	8-PowerVDFN	8 V	Surface Mount	26.5 nC	2085 pF	100 A

Catalog

N-channel 100 V, 0.0062 Ohm typ., 19 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Description

This device is an N-channel Power MOSFET developed using the 7thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.