STL100N1VH5

Obsolete

STMicroelectronics

MOSFET N-CH 12V 100A POWERFLAT

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STL100N1VH5

Obsolete

STMicroelectronics

MOSFET N-CH 12V 100A POWERFLAT

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL100N1VH5

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2085 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	500 mV

STL100N10F7 Series

N-channel 100 V, 0.0062 Ohm typ., 19 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STL100N10F7	7.3 mOhm	PowerFlat™ (5x6)	MOSFET (Metal Oxide)	10 V	5680 pF	N-Channel	-55 °C	175 ░C	80 nC	5 W 100 W	4 V	100 V	8-PowerVDFN	20 V	Surface Mount
STMicroelectronics STL100N1VH5	3 mOhm	PowerFlat™ (5x6)	MOSFET (Metal Oxide)	2.5 V 4.5 V		N-Channel	-55 °C	150 °C		60 W	500 mV	12 V	8-PowerVDFN	8 V	Surface Mount	26.5 nC	2085 pF	100 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STL100N10F7 Series

This device is an N-channel Power MOSFET developed using the 7thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Documents

Technical documentation and resources