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IPD65R380C6BTMA1 - TO252-3

IPD65R380C6BTMA1

Obsolete
Infineon Technologies

TRANS MOSFET N-CH 650V 10.6A 3-PIN(2+TAB) DPAK T/R

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IPD65R380C6BTMA1 - TO252-3

IPD65R380C6BTMA1

Obsolete
Infineon Technologies

TRANS MOSFET N-CH 650V 10.6A 3-PIN(2+TAB) DPAK T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD65R380C6BTMA1
Current - Continuous Drain (Id) @ 25°C10.6 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]39 nC
Input Capacitance (Ciss) (Max) @ Vds710 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs380 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IPD65R Series

N-Channel 650 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3

Documents

Technical documentation and resources